Transport mechanism in O-terminated diamond/ZrO2 based MOSCAPs

Metal Oxide Semiconductor capacitors were fabricated using p-type O-terminated (001) diamond and zirconium dioxide deposited by atomic layer deposition at low temperature (100 °C). X-ray diffraction transmission electron microscopy evidence monoclinic structure polycrystalline nature of the oxide layer. I-V, CV CF experiments have been performed in a large frequency range, i.e. from 1 Hz to MHz, order analyse electrical properties metal/dielectric/diamond stack. The presence charges interface states induces flat-band voltage shift curve strong Fermi level pinning effect. A leakage current mechanism considering correlation microstructural characterization response is proposed.